GeSi strained layers and their applicationsde Jain, S. C.MateriasSiliconGermaniumSemiconductorsLayer structure (Solids)Ediciones (1)GeSi strained layers and their applications (1995)Institute of Physics Pub. · inglésMás obras de Jain, S. C.Silicon-germanium strained layers and heterostructuresPPhysics of semiconductor devicesPhysics of semiconductor devicesPPhysics of semiconductor devicesPhysics of semiconductor devices
EElectronic absorption and internal and external vibrational Electronic absorption and internal and external vibrational data of atomic and molecular ions doped in alkali halide crystals1974
