
ULSI devices
Edición de la obra ULSI devices
| Autor | C. Y. Chang, S. M. Sze |
|---|---|
| Editorial | Wiley |
| Fecha de publicación | 2000 |
| Lugar | New York |
| Idioma | inglés |
| Páginas | 729 |
| ISBN-10 | 0471240672 |
| OCLC | 41315491 |
| LCCN | 99029979 |
| Número de Cutter | C456u |
"Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices a MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications."--BOOK JACKET.