GaN Transistor Modeling for RF and Power Electronics
Using the ASM-GaN-HEMT Model
Edición de la obra GaN Transistor Modeling for RF and Power Electronics
| Autor | Yogesh Singh Chauhan, Sheikh Aamir Ahsan, Ahtisham Ul Haq Pampori, Raghvendra Dangi |
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| Editorial | Elsevier Science & Technology |
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